PART |
Description |
Maker |
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules 2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
IXGN50N60BD2 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围 SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
SKM195GB063DN SKM195GAL063DN SKM195GAR063DN |
Superfast NPT-IGBT Modules 250 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SKM195GAL066D |
Trench IGBT Modules 265 A, 600 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX252GB126HDS |
Trench IGBT Modules 270 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|